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Search for "self-assembled quantum dots" in Full Text gives 2 result(s) in Beilstein Journal of Nanotechnology.
Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study
Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182
- Currently, there is considerable interest in the growth of self-assembled quantum dots their application in optoelectronics and nanosized structures. For instance, semiconducting Si, Ge and SiGe nanocrystals (NCs/NPs) embedded in a dielectric oxide matrix have been found to exhibit strong quantum
Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99
- . 10.3762/bjnano.9.99 Abstract A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single particle states in these
- absorption; quantum qot filling; self-assembled quantum dots; semi-empirical tight-binding; sp3d5s* with spin–orbit coupling (sp3d5s*_SO); Introduction Self-assembled quantum dots are employed as light absorbers in many optoelectronic devices, such as quantum-dot infrared photodetectors (QDIPs) [1][2], and
- many-particle configuration interaction (CI) calculations for a proper treatment of the optical transitions. The effects of alloy mole fraction of the strain controlling layer and quantum dot dimensions are also discussed. Self-assembled quantum dots have around 10% lattice strain [5]. Atomistic strain
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